NickelMaghrebV1, Main, Exploration, bibRecord, 000093

Study of nickel doping effects on structural, electrical and optical properties of sprayed ZnO semiconductor layers

Identifieur interne : 000093 ( Main/Exploration ); précédent : 000092; suivant : 000094

Study of nickel doping effects on structural, electrical and optical properties of sprayed ZnO semiconductor layers

Auteurs : A. Mhamdi [Tunisie] ; B. Ouni [Tunisie] ; A. Amlouk [Tunisie] ; K. Boubaker [Tunisie] ; M. Amlouk [Tunisie]

Source :

Journal of alloys and compounds [ 0925-8388 ] ; 2014.

RBID : Pascal:14-0248428

Descripteurs français

Pascal (Inist)
- Dopage, Concentration impureté, Addition nickel, Diffraction RX, Spectre absorption, Bande interdite, Energie activation, Conductivité électrique, Etat défaut, Etat localisé, Dépendance fréquence, Conduction saut, Hauteur barrière, Oxyde de zinc, Semiconducteur, Couche mince, Structure wurtzite, ZnO.
Wicri :
- topic : Dopage.

English descriptors

KwdEn :
- Absorption spectra, Activation energy, Barrier height, Defect states, Doping, Electrical conductivity, Energy gap, Frequency dependence, Hopping conduction, Impurity density, Localized states, Nickel additions, Semiconductor materials, Thin films, Wurtzite structure, XRD, Zinc oxide.

Abstract

In the present study, zinc oxide doped nickel thin films (ZnO:Ni) at different percentage (1-3%) were deposited on glass substrates using a chemical spray technique. The effect of Ni concentration on the structural, electrical and optical properties of the ZnO:Ni thin films were investigated. The X-ray diffraction analysis shows that the films were well crystallized in würtzite phase with the crystallites preferentially oriented towards (002) direction parallel c-axis. On the other hand, the optical transmittance measurement was found to be higher than 80% and the optical band gap varies between 3.19 and 3.25 eV. The activation energy values calculated from DC conductivity and angular frequency relaxation are almost identical, indicating that the conduction mechanism is thermally activated by hopping between localized states. Moreover, the analysis of the frequency and temperature dependence of AC conductivity supports the correlated barrier hopping (CBH) model. Further, the value of the maximum height W_m barrier was estimated using the Elliott model, which suggests that the charge carrier jumps over a potential barrier between the defect states. Finally, all results have been discussed in terms of the nickel doping concentration.

Affiliations:

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Le document en format XML

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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectra</term>
<term>Activation energy</term>
<term>Barrier height</term>
<term>Defect states</term>
<term>Doping</term>
<term>Electrical conductivity</term>
<term>Energy gap</term>
<term>Frequency dependence</term>
<term>Hopping conduction</term>
<term>Impurity density</term>
<term>Localized states</term>
<term>Nickel additions</term>
<term>Semiconductor materials</term>
<term>Thin films</term>
<term>Wurtzite structure</term>
<term>XRD</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Dopage</term>
<term>Concentration impureté</term>
<term>Addition nickel</term>
<term>Diffraction RX</term>
<term>Spectre absorption</term>
<term>Bande interdite</term>
<term>Energie activation</term>
<term>Conductivité électrique</term>
<term>Etat défaut</term>
<term>Etat localisé</term>
<term>Dépendance fréquence</term>
<term>Conduction saut</term>
<term>Hauteur barrière</term>
<term>Oxyde de zinc</term>
<term>Semiconducteur</term>
<term>Couche mince</term>
<term>Structure wurtzite</term>
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<front><div type="abstract" xml:lang="en">In the present study, zinc oxide doped nickel thin films (ZnO:Ni) at different percentage (1-3%) were deposited on glass substrates using a chemical spray technique. The effect of Ni concentration on the structural, electrical and optical properties of the ZnO:Ni thin films were investigated. The X-ray diffraction analysis shows that the films were well crystallized in würtzite phase with the crystallites preferentially oriented towards (002) direction parallel c-axis. On the other hand, the optical transmittance measurement was found to be higher than 80% and the optical band gap varies between 3.19 and 3.25 eV. The activation energy values calculated from DC conductivity and angular frequency relaxation are almost identical, indicating that the conduction mechanism is thermally activated by hopping between localized states. Moreover, the analysis of the frequency and temperature dependence of AC conductivity supports the correlated barrier hopping (CBH) model. Further, the value of the maximum height W<sub>m</sub>
 barrier was estimated using the Elliott model, which suggests that the charge carrier jumps over a potential barrier between the defect states. Finally, all results have been discussed in terms of the nickel doping concentration.</div>
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Study of nickel doping effects on structural, electrical and optical properties of sprayed ZnO semiconductor layers

Study of nickel doping effects on structural, electrical and optical properties of sprayed ZnO semiconductor layers

Source :

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

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Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri